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Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters

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dc.contributor.affiliationDA-IICT, Gandhinagar
dc.contributor.authorPatel, Dax
dc.contributor.authorSojitra, Soham
dc.contributor.authorKadia, Jay
dc.contributor.authorChaudhary, Bhavik
dc.contributor.authorParekh, Rutu
dc.contributor.authorParekh, Rutu
dc.contributor.authorParekh, Rutu
dc.contributor.authorParekh, Rutu
dc.contributor.authorParekh, Rutu
dc.contributor.authorParekh, Rutu
dc.contributor.researcherPatel, Dax (201701016)
dc.contributor.researcherSojitra, Soham (201701041)
dc.contributor.researcherKadia, Jay (201701225)
dc.contributor.researcherChaudhary, Bhavik (201701226)
dc.date.accessioned2025-08-01T13:09:19Z
dc.date.issued01-04-2022
dc.format.extent01-Sep
dc.identifier.citationDax Patel, Soham Sojitra, Jay Kadia, Bhavik Chaudhary and Parekh, Rutu, "Comparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters," Trends in Sciences, vol. 19, no. 7, ISSN: 2774-0226, 1 Apr. 2022, pp. 1-9. doi:10.48048/tis.2022.3216
dc.identifier.doihttps://doi.org/10.48048/tis.2022.3216
dc.identifier.issn2774-0226
dc.identifier.scopus2-s2.0-85127968780
dc.identifier.urihttps://ir.daiict.ac.in/handle/dau.ir/1835
dc.publisherWalailak University
dc.relation.ispartofseriesVol. 19; No. 7
dc.sourceTrends in Sciences
dc.source.urihttps://tis.wu.ac.th/index.php/tis/article/view/3216
dc.titleComparative Study of Double Gate and Silicon on Insulator MOSFET by Varying Device Parameters
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