Design of wideband low noise distributed amplifier

Abstract

This thesis reviews and analyses the designing of wideband low noise amplifier. All the parameters required for designing a low noise amplifier are properly analysed. This thesis includes the design of basic single stage low noise amplifier and later wideband low noise distributed amplifier.The first stage of thesis covers the basics of LNA design and the design of single stage LNA at centre frequency 3.2 GHz. In this device, GaAs pseudomorphic High Electron Mobility Transistor(pHEMT) is used from PH25 process provided by UMS foundry (United Monolithic Semiconductor, Germany). We are using 0.25?m pHEMT technology. This process is suitable to design MMICs. The common-source(CS) topology is used along with inductive source degeneration to combat the noise figure. The results are reported after both circuit and EM simulation.The second stage includes the design of wideband low noise distributed amplifier. This device covers the bandwidth from 1-6 GHz. Distributed amplification wideband technique is used in this device. In this device, four stages are cascaded in parallel. All the components in this device are from D01PH process provided by OMMIC (Ohmic MMIC, France). We are using 0.13?m pHEMT technology. We are getting noise figure less than 2.5dB over entire bandwidth with minimum noise figure of 1.4dB. All the results are reported in this thesis after both circuit and EM simulation.