Simulation and Comparative Study of Resonant Tunneling Diode

Abstract

This paper studies and investigates the effect of physical and electrical parameters on double, triple and six barrier resonant tunneling diodes (RTD). The materials used for quantum well and barriers are Gallium arsenide (GaAs) and Aluminium gallium arsenide (AlGaAs), respectively. The parameters that were reasoned and studied include conduction band, current density, transmission coefficient and resonance energy. The above parameters were studied by changing bias voltage, temperature, barrier width and doping concentration. From the simulations performed it is observed that for double barrier RTD the peak current density is observed at 0.2 V and the valley current density is observed at 0.3 V, whereas for a triple barrier RTD the peak current density is observed at 0.015 V and the valley current density is observed at 0.06 V. The value of transmission coefficient for double barrier RTD decreases especially after bias applied is more than resonant bias (0.2 V). The effect of increasing bias leads to a decrease in the resonance level in the conduction band. The width of resonance energy decreases with the increase in barrier width.�With increase in number of barrier the number of resonance level increases which leads to an increasing peaks in the transmission coefficient curve. The effect of increasing temperature leads to higher current and more resonance energy. With the thickening of barrier width, less transmission of electrons occurs leading to a reduced current density. When the barriers are increased the negative differential region (NDR) is achieved at low voltages.